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? semiconductor components industries, llc, 2016 september, 2017 ? rev. 27 1 publication order number: ncp114/d ncp114 300 ma cmos low dropout regulator the ncp114 is 300 ma ldo that provides the engineer with a very stable, accurate voltage with low noise suitable for space constrained, noise sensitive applications. in order to optimize performance for battery operated portable applications, the ncp114 employs the dynamic quiescent current adjustment for very low i q consumption at no?load. features ? operating input voltage range: 1.7 v to 5.5 v ? available in fixed voltage options: 0.75 v to 3.6 v contact factory for other voltage options ? very low quiescent current of typ. 50 a ? standby current consumption: typ. 0.1 a ? low dropout: 135 mv typical at 300 ma ? 1% accuracy at room temperature ? high power supply ripple rejection: 75 db at 1 khz ? thermal shutdown and current limit protections ? stable with a 1 f ceramic output capacitor ? available in udfn and tsop packages ? these are pb?free devices typical applicaitons ? pdas, mobile phones, gps, smartphones ? wireless handsets, wireless lan, bluetooth ? , zigbee ? ? portable medical equipment ? other battery powered applications figure 1. typical application schematic ncp114 in en out gnd off on v out c out 1 f ceramic c in v in marking diagrams see detailed ordering, marking and shipping information on page 15 of this data sheet. ordering information pin connections xx = specific device code m = date code 34 1 2 gnd out en in (bottom view) udfn4 mx suffix case 517cu 1 xx m 1 www. onsemi.com (note: microdot may be in either location) tsop?5 sn suffix case 483 out in gnd n/c en 1 2 3 4 5 (top view) 1 5 xxxayw xxx = specific device code a = assembly location y = year w = work week = pb?free package
ncp114 www. onsemi.com 2 in out bandgap reference active discharge* mosfet driver with current limit thermal shutdown enable logic gnd auto low power mode en en figure 2. simplified schematic block diagram *active output discharge function is present only in ncp114amxyyytcg devices. yyy denotes the particular v out option. pin function description pin no. (udfn4) pin no. (tsop5) pin name description 1 5 out regulated output voltage pin. a small ceramic capacitor with minimum value of 1 f is need- ed from this pin to ground to assure stability. 2 2 gnd power supply ground. 3 3 en driving en over 0.9 v turns on the regulator. driving en below 0.4 v puts the regulator into shutdown mode. 4 1 in input pin. a small capacitor is needed from this pin to ground to assure stability. ? 4 n/c not connected. this pin can be tied to ground to improve thermal dissipation. ? ? epad exposed pad should be connected directly to the gnd pin. soldered to a large ground cop- per plane allows for effective heat removal. absolute maximum ratings rating symbol value unit input voltage (note 1) v in ?0.3 v to 6 v v output voltage v out ?0.3 v to v in + 0.3 v or 6 v v enable input v en ?0.3 v to v in + 0.3 v or 6 v v output short circuit duration t sc s maximum junction temperature t j(max) 150 c storage temperature t stg ?55 to 150 c esd capability, human body model (note 2) esd hbm 2000 v esd capability, machine model (note 2) esd mm 200 v stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device function ality should not be assumed, damage may occur and reliability may be affected. 1. refer to electrical characteristics and application information for safe operating area. 2. this device series incorporates esd protection and is tested by the following methods: esd human body model tested per eia/jesd22?a114, esd machine model tested per eia/jesd22?a115, latchup current maximum rating tested per jedec standard: jesd78. thermal characteristics (note 3) rating symbol value unit thermal characteristics, udfn4 1x1 mm thermal resistance, junction?to?air r ja 170 c/w thermal characteristics, tsop?5 thermal resistance, junction?to?air r ja 236 c/w 3. single component mounted on 1 oz, fr 4 pcb with 645 mm 2 cu area.
ncp114 www. onsemi.com 3 electrical characteristics ?40 c t j 85 c; v in = v out(nom) + 1 v for v out options greater than 1.5 v. otherwise v in = 2.5 v, whichever is greater; i out = 1 ma, c in = c out = 1 f, unless otherwise noted. v en = 0.9 v. typical values are at t j = +25 c. min./max. are for t j = ?40 c and t j = +85 c respectively (note 4). parameter test conditions symbol min typ max unit operating input voltage v in 1.7 5.5 v output voltage accuracy ?40 c t j 85 c v out 2.0 v v out ?40 +40 mv v out > 2.0 v ?2 +2 % line regulation v out + 0.5 v v in 5.5 v (v in 1.7 v) reg line 0.01 0.1 %/v load regulation ? udfn package i out = 1 ma to 300 ma reg load 12 30 mv load regulation ? tsop?5 package 28 45 load transient i out = 1 ma to 300 ma or 300 ma to 1 ma in 1 s, c out = 1 f tran load ?50/ +30 mv dropout voltage ? udfn package (note 5 ) i out = 300 ma v out = 1.5 v v do 365 460 mv v out = 1.85 v 245 330 v out = 2.8 v 155 230 v out = 3.0 v 145 220 v out = 3.1 v 140 210 v out = 3.3 v 135 200 dropout voltage ? tsop package (note 5) i out = 300 ma v out = 1.5 v v do 380 485 mv v out = 1.85 v 260 355 v out = 2.8 v 170 255 v out = 3.0 v 160 245 v out = 3.1 v 155 235 v out = 3.3 v 150 225 output current limit v out = 90% v out(nom) i cl 300 600 ma ground current i out = 0 ma i q 50 95 a shutdown current v en 0.4 v, v in = 5.5 v i dis 0.01 1 a en pin threshold voltage high threshold low threshold v en voltage increasing v en voltage decreasing v en_hi v en_lo 0.9 0.4 v en pin input current v en = 5.5 v i en 0.3 1.0 a power supply rejection ratio v in = 3.6 v, v out = 3.1 v i out = 150 ma f = 1 khz psrr 75 db output noise voltage v in = 2.5 v, v out = 1.8 v, i out = 150 ma f = 10 hz to 100 khz v n 70 v rms thermal shutdown temperature temperature increasing from t j = +25 c t sd 160 c thermal shutdown hysteresis temperature falling from t sd t sdh 20 c active output discharge resistance v en < 0.4 v, version a only r dis 100 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. performance guaranteed over the indicated operating temperature range by design and/or characterization. production tested at t j = t a = 25 c. low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible . 5. characterized when v out falls 100 mv below the regulated voltage at v in = v out(nom) + 1 v.
ncp114 www. onsemi.com 4 typical characteristics 1.210 v out , output voltage (v) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 i out = 1 ma i out = 300 ma v in = 2.5 v v out = 1.2 v c in = 1 f c out = 1 f figure 3. output voltage vs. temperature v out = 1.2 v (udfn) 2.83 v out , output voltage (v) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 figure 4. output voltage vs. temperature v out = 2.8 v (udfn) v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f i out = 1 ma i out = 300 ma 80 i q , quiescent current ( a) v in , input voltage (v) 0.0 0.5 figure 5. quiescent current vs. input voltage 70 60 50 40 30 20 10 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v out = 2.8 v c in = 1 f c out = 1 f 25 c ?40 c 85 c 85 c 25 c ?40 c 1000 i gnd , ground current ( a) i out , output current (ma) 0.001 figure 6. ground current vs. output current 1000 0.01 0.1 1 10 100 v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 1000 i gnd , ground current ( a) t j , junction temperature ( c) ?40 figure 7. ground current vs. temperature ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 i out = 300 ma v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 0.1 reg line , line regulation (%/v) t j , junction temperature ( c) figure 8. line regulation vs. output current v out = 1.2 v 0.08 0.06 0.04 0.02 0 ?0.02 ?0.04 ?0.06 ?0.08 ?1 ?40 ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 v in = 1.7 v to 5.5 v v out = 1.2 v i out = 1 ma c in = 1 f c out = 1 f i out = 1 ma 1.205 1.200 1.195 1.190 1.185 1.180 1.175 1.170 1.165 1.160 2.82 2.81 2.80 2.79 2.78 2.77 2.76 2.75 2.74 2.73 900 800 700 600 500 400 300 200 100 0 900 800 700 600 500 400 300 200 100 0
ncp114 www. onsemi.com 5 typical characteristics 0.1 reg line , line regulation (%/v) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v in = 3.8 v to 5.5 v v out = 2.8 v i out = 1 ma c in = 1 f c out = 1 f figure 9. line regulation vs. temperature v out = 2.8 v 20 reg load , load regulation (mv) t j , junction temperature ( c) ?40 9 0 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 figure 10. load regulation vs. temperature v out = 1.2 v (udfn) 20 reg load , load regulation (mv) t j , junction temperature ( c) figure 11. load regulation vs. temperature v out = 2.8 v (udfn) 200 v drop , dropout voltage (mv) i out , output current (ma) 0 figure 12. dropout voltage vs. output current v out = 2.8 v (udfn) 50 100 v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 250 v drop , dropout voltage (mv) t j , junction temperature ( c) ?40 figure 13. dropout voltage vs. output current v out = 3.45 v (udfn) ?30 ?20 ?10 0 10 9 0 80 70 60 50 40 30 20 i out = 0 ma i out = 300 ma v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f figure 14. dropout voltage vs. temperature v out = 2.8 v (udfn) v in = 2.5 v v out = 1.2 v i out = 1 ma to 300 ma c in = 1 f c out = 1 f 0.08 0.06 0.04 0.02 0 ?0.02 ?0.04 ?0.06 ?0.08 ?0.1 v in = 3.8 v v out = 2.8 v i out = 1 ma to 300 ma c in = 1 f c out = 1 f ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 250 30 0 t j = 85 c t j = ?40 c t j = 25 c i out = 100 ma 18 16 14 12 10 8 6 4 2 0 18 16 14 12 10 8 6 4 2 0 180 160 140 120 100 80 60 40 20 0 225 200 175 150 125 100 75 50 25 0 150 200 v drop , dropout voltage (mv) i out , output current (ma) 0 50 100 v in = 4.45 v v out = 3.45 v c in = 1 f c out = 1 f 250 300 t j = 85 c t j = ?40 c t j = 25 c 180 160 140 120 100 80 60 40 20 0 150 200
ncp114 www. onsemi.com 6 typical characteristics 800 i sc , short?circuit current (ma) t j , junction temperature ( c) ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v in = v out(nom) + 1 v or 2.5 v v out = 0 v c in = 1 f c out = 1 f figure 15. dropout voltage vs. temperature v out = 3.45 v (udfn) 800 i sc , short?circuit current (ma) v in , input voltage (v) 3.0 5 .6 5.4 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 figure 16. current limit vs. temperature 1 v en , voltage on enable pin (v) t j , junction temperature ( c) figure 17. short?circuit current vs. temperature 350 i en , enable current (na) t j , junction temperature ( c) figure 18. short?circuit current vs. input voltage figure 19. enable voltage threshold vs. temperature v out = 0 v c in = 1 f c out = 1 f v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f ?40 90 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v out = 2.8 v v out = 1.2 v 750 700 650 600 550 500 450 400 350 300 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 off ?> on on ?> off 315 280 245 210 175 140 105 70 35 0 ?40 9 0 80 ?30 ?20 ?10 0 10 20 30 40 50 60 70 v en = 5.5 v v en = 0.4 v v in = 5.5 v v out = 2.8 v c in = 1 f c out = 1 f 750 700 650 600 550 500 450 400 350 300 figure 20. current to enable pin vs. temperature 800 i cl , current limit (ma) t j , junction temperature ( c) ?40 ?30 ?20 ?10 0 10 9 0 80 70 60 50 40 30 20 v in = v out(nom) + 1 v or 2.5 v v out = 90% v out(nom) c in = 1 f c out = 1 f 750 700 650 600 550 500 450 400 350 300 v out = 2.8 v v out = 1.2 v v drop , dropout voltage (mv) t j , junction temperature ( c) ?40 ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 i out = 0 ma i out = 300 ma v in = 4.45 v v out = 3.45 v c in = 1 f c out = 1 f i out = 100 ma 180 160 140 120 100 80 60 40 20 0
ncp114 www. onsemi.com 7 typical characteristics 100 i dis , disable current (na) t j , junction temperature ( c) ?40 figure 21. disable current vs. temperature ?30 ?20 ?10 0 10 90 80 70 60 50 40 30 20 v in = 5.5 v v out = 2.8 v c in = 1 f c out = 1 f 80 60 40 20 0 ?20 ?40 ?60 ?80 ?100
ncp114 www. onsemi.com 8 typical characteristics figure 22. output voltage noise spectral density for v out = 1.2 v, c out = 1 f frequency (khz) 1000 10 1 0.1 0.01 10000 figure 23. output voltage noise spectral density for v out = 2.8 v, c out = 1 f figure 24. output voltage noise spectral density for v out = 2.8 v, c out = 4.7 f output voltage noise (nv/rthz) v in = 2.5 v v out = 1.2 v c in = 1 f c out = 1 f i out = 10 ma 1 ma 60.93 59.11 10 ma 52.73 50.63 300 ma 52.06 50.17 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out frequency (khz) 10000 output voltage noise (nv/rthz) frequency (khz) output voltage noise (nv/rthz) 100 1000 10 1 0.1 0.01 100 1000 10 1 0.1 0.01 100 i out = 1 ma i out = 300 ma 1000 100 10 1 1 ma 79.23 74.66 10 ma 75.03 70.37 300 ma 87.74 83.79 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out v in = 3.8 v v out = 2.8 v c in = 1 f c out = 1 f 1000 100 10 1 i out = 10 ma i out = 1 ma i out = 300 ma 1 ma 80.17 75.29 10 ma 81.28 76.46 300 ma 93.23 89.62 10 hz ? 100 khz 100 hz ? 100 khz rms output noise ( v) i out i out = 10 ma i out = 1 ma i out = 300 ma 10000 1000 100 10 1 v in = 3.8 v v out = 2.8 v c in = 1 f c out = 4.7 f
ncp114 www. onsemi.com 9 typical characteristics 100 rr, ripple rejection (db) frequency (khz) figure 25. power supply rejection ratio, v out = 2.8 v, c out = 1 f rr, ripple rejection (db) frequency (khz) figure 26. power supply rejection ratio, v out = 2.8 v, c out = 4.7 f 100 esr ( ) i out , output current (ma) 0 figure 27. power supply rejection ratio, v out = 3.45 v, c out = 1 f 0.1 i out = 1 ma i out = 10 ma i out = 150 ma i out = 300 ma 1 10000 1000 10 100 100 10 1 0.1 0.01 50 100 150 200 250 300 v in = 5.5 v c in = 1 f c out = 1 f mlcc, x7r, 1206 size unstable operation stable operation 0.1 1 10000 1000 10 100 90 80 70 60 50 40 30 20 10 0 90 80 70 60 50 40 30 20 10 0 v in = 3.8 v, v out = 2.8 v c in = none, c out = 1 f mlcc, x7r, 1206 size i out = 1 ma i out = 10 ma i out = 150 ma i out = 300 ma v in = 3.8 v, v out = 2.8 v c in = none, c out = 4.7 f mlcc, x7r, 1206 size figure 28. output capacitor esr vs. output current 100 rr, ripple rejection (db) frequency (khz) 0.1 i out = 1 ma i out = 10 ma i out = 150 ma i out = 300 ma 1 10000 1000 10 100 90 80 70 60 50 40 30 20 10 0 v in = 4.4 v, v out = 3.45 v c in = none, c out = 1 f mlcc, x7r, 1206 size
ncp114 www. onsemi.com 10 typical characteristics figure 29. enable turn?on response, c out = 1 f, i out = 1 ma figure 30. enable turn?on response, c out = 1 f, i out = 300 ma v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 1 ma 500 mv/div 1 v/div 200 ma/div i inrush 40 s/div v en v out v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 300 ma 200 ma/div 500 mv/div 1 v/div v en i inrush v out 40 s/div figure 31. enable turn?on response, c out = 4.7 f, i out = 1 ma 500 mv/div 1 v/div 200 ma/div i inrush 40 s/div v en v out v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 1 ma 200 ma/div 500 mv/div 1 v/div v in = 3.8 v v out = 2.8 v v en = 1 v c out = 1 f c in = 1 f i out = 300 ma figure 32. enable turn?on response, c out = 4.7 f, i out = 300 ma 40 s/div i inrush v en v out 500 mv/div 10 mv/div figure 33. line transient response ? rising edge, v out = 2.8 v, i out = 1 ma 20 s/div t rise = 1 s v in v out figure 34. line transient response ? falling edge, v out = 2.8 v, i out = 1 ma 10 s/div 500 mv/div 10 mv/div t fall = 1 s v out v in v in = 3.8 v to 4.8 v v out = 2.8 v c out = 1 f c in = 1 f i out = 1 ma v in = 4.8 v to 3.8 v v out = 2.8 v c out = 1 f c in = 1 f i out = 1 ma
ncp114 www. onsemi.com 11 typical characteristics figure 35. line transient response ? rising edge, v out = 2.8 v, i out = 300 ma 500 mv/div 20 mv/div 4 s/div v in v out v in = 3.8 v to 4.8 v v out = 2.8 v c out = 10 f c in = 1 f i out = 300 ma 500 mv/div 20 mv/div figure 36. line transient response ? falling edge, v out = 2.8 v, i out = 300 ma 4 s/div v in v out 100 ma/div 20 mv/div figure 37. load transient response ? rising edge, v out = 1.2 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f 4 s/div v in = 2.5 v v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) t rise = 1 s c out = 4.7 f c out = 1 f i out v out figure 38. load transient response ? falling edge, v out = 1.2 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f 20 s/div 20 mv/div c out = 4.7 f c out = 1 f t fall = 1 s v out 20 mv/div figure 39. load transient response ? rising edge, v out = 2.8 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f 4 s/div c out = 1 f c out = 4.7 f t rise = 1 s v out figure 40. load transient response ? falling edge, v out = 2.8 v, i out = 1 ma to 300 ma, c out = 1 f, 4.7 f 10 s/div 20 mv/div t fall = 1 s c out = 4.7 f c out = 1 f v out v in = 4.8 v to 3.8 v v out = 2.8 v c out = 1 f c in = 1 f i out = 300 ma t rise = 1 s t fall = 1 s v in = 2.5 v v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) i out v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) 100 ma/div i out i out v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) 100 ma/div 100 ma/div
ncp114 www. onsemi.com 12 typical characteristics 100 ma/div 20 mv/div figure 41. load transient response ? rising edge, v out = 2.8 v, i out = 1 ma to 300 ma, v in = 3.8 v, 5.5 v 2 s/div v in = 5.5 v t rise = 1 s i out v out v in = 3.8 v figure 42. load transient response ? falling edge, v out = 2.8 v, i out = 1 ma to 300 ma, v in = 3.8 v, 5.5 v 10 s/div 20 mv/div t fall = 1 s i out v out 1 v/div figure 43. turn?on/off ? slow rising v in 4 ms/div figure 44. short?circuit and thermal shutdown 10 ms/div v out 200 ma/div 500 ma/div v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v in = 5.5 v v in = 3.8 v v in = 3.8 v v out = 2.8 v c in = 1 f (mlcc) c out = 1 f (mlcc) v out v in v in = 5.5 v v out = 2.8 v i out = 10 ma c in = 1 f (mlcc) c out = 1 f (mlcc) overheating full load i out thermal shutdown tsd cycling v in = 5.5 v v out = 1.2 v c in = 1 f (mlcc) c out = 1 f (mlcc) 100 ma/div
ncp114 www. onsemi.com 13 applications information general the ncp114 is a high performance 300 ma low dropout linear regulator. this device delivers very high psrr (over 75 db at 1 khz) and excellent dynamic performance as load/line transients. in connection with very low quiescent current this device is very suitable for various battery powered applications such as tablets, cellular phones, wireless and many others. the device is fully protected in case of output overload, output short circuit condition and overheating, assuring a very robust design. input capacitor selection (c in ) it is recommended to connect at least a 1 f ceramic x5r or x7r capacitor as close as possible to the in pin of the device. this capacitor will provide a low impedance path for unwanted ac signals or noise modulated onto constant input voltage. there is no requirement for the min. /max. esr of the input capacitor but it is recommended to use ceramic capacitors for their low esr and esl. a good input capacitor will limit the influence of input trace inductance and source resistance during sudden load current changes. larger input capacitor may be necessary if fast and large load transients are encountered in the application. output decoupling (c out ) the ncp114 requires an output capacitor connected as close as possible to the output pin of the regulator. the recommended capacitor value is 1 f and x7r or x5r dielectric due to its low capacitance variations over the specified temperature range. the ncp114 is designed to remain stable with minimum effective capacitance of 0.22 f to account for changes with temperature, dc bias and package size. especially for small package size capacitors such as 0402 the effective capacitance drops rapidly with the applied dc bias. there is no requirement for the minimum value of equivalent series resistance (esr) for the c out but the maximum value of esr should be less than 2 . larger output capacitors and lower esr could improve the load transient response or high frequency psrr. it is not recommended to use tantalum capacitors on the output due to their large esr. the equivalent series resistance of tantalum capacitors is also strongly dependent on the temperature, increasing at low temperature. enable operation the ncp114 uses the en pin to enable/disable its device and to deactivate/activate the active discharge function. if the en pin voltage is <0.4 v the device is guaranteed to be disabled. the pass transistor is turned?off so that there is virtually no current flow between the in and out. the active discharge transistor is active so that the output voltage v out is pulled to gnd through a 100 resistor. in the disable state the device consumes as low as typ. 10 na from the v in . if the en pin voltage >0.9 v the device is guaranteed to be enabled. the ncp114 regulates the output voltage and the active discharge transistor is turned?off. the en pin has internal pull?down current source with typ. value of 300 na which assures that the device is turned?off when the en pin is not connected. in the case where the en function isn?t required the en should be tied directly to in. output current limit output current is internally limited within the ic to a typical 600 ma. the ncp114 will source this amount of current measured with a voltage drops on the 90% of the nominal v out . if the output voltage is directly shorted to ground (v out = 0 v), the short circuit protection will limit the output current to 630 ma (typ). the current limit and short circuit protection will work properly over whole temperature range and also input voltage range. there is no limitation for the short circuit duration. thermal shutdown when the die temperature exceeds the thermal shutdown threshold (t sd ? 160 c typical), thermal shutdown event is detected and the device is disabled. the ic will remain in this state until the die temperature decreases below the thermal shutdown reset threshold (t sdu ? 140 c typical). once the ic temperature falls below the 140 c the ldo is enabled again. the thermal shutdown feature provides the protection from a catastrophic device failure due to accidental overheating. this protection is not intended to be used as a substitute for proper heat sinking. power dissipation as power dissipated in the ncp114 increases, it might become necessary to provide some thermal relief. the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. the maximum power dissipation the ncp114 can handle is given by: p d(max) 125 c t a ja (eq. 1) the power dissipated by the ncp114 for given application conditions can be calculated from the following equations: p d v in i gnd @i out i out v in v out (eq. 2)
ncp114 www. onsemi.com 14 figure 45. ja vs. copper area (udfn4) 1 100 120 140 160 180 200 220 0 100 200 300 400 500 600 700 copper heat spreader area (mm 2 ) ja , junction?to?ambient thermal resistance ( c/w) p d(max) , t a = 25 c, 2 oz cu p d(max) , maximum power dissipation (w) p d(max) , t a = 25 c, 1 oz cu ja , 1 oz cu ja , 2 oz cu 240 260 0.9 0.8 0.7 0.6 0.5 0.4 figure 46. ja vs. copper area (tsop?5) 0.9 150 200 250 300 350 400 450 0 100 200 300 400 500 600 700 copper heat spreader area (mm 2 ) ja , junction?to?ambient thermal resistance ( c/w) p d(max) , t a = 25 c, 2 oz cu p d(max) , maximum power dissipation (w) p d(max) , t a = 25 c, 1 oz cu ja , 1 oz cu ja , 2 oz cu 0.75 0.6 0.45 0.3 0.15 0 reverse current the pmos pass transistor has an inherent body diode which will be forward biased in the case that v out > v in . due to this fact in cases, where the extended reverse current condition can be anticipated the device may require additional external protection. power supply rejection ratio the ncp114 features very good power supply rejection ratio. if desired the psrr at higher frequencies in the range 100 khz ? 10 mhz can be tuned by the selection of c out capacitor and proper pcb layout. turn?on time the turn?on time is defined as the time period from en assertion to the point in which v out will reach 98% of its nominal value. this time is dependent on various application conditions such as v out(nom) , c out and t a . for example typical value for v out = 1.2 v, c out = 1 f, i out = 1 ma and t a = 25 c is 90 s. pcb layout recommendations to obtain good transient performance and good regulation characteristics place c in and c out capacitors close to the device pins and make the pcb traces wide. in order to minimize the solution size, use 0402 capacitors. larger copper area connected to the pins will also improve the device thermal resistance. the actual power dissipation can be calculated from the equation above (equation 2). expose pad should be tied the shortest path to the gnd pin.
ncp114 www. onsemi.com 15 ordering information device voltage option marking marking rotation option package shipping ? ncp114amx075tcg 0.75 v aw 0 with active output discharge function udfn4 (pb-free) 3000 / tape & reel ncp114amx080tcg 0.80 v at 0 ncp114amx090tcg 0.9 v ap 0 ncp114amx100tcg 1.0 v 6 180 ncp114amx105tcg 1.05 v r 0 ncp114amx110tbg 1.1 v f 180 ncp114amx110tcg 1.1 v f 180 ncp114amx115tcg 1.15 v am 0 ncp114amx120tbg 1.2 v t 0 ncp114amx120tcg 1.2 v t 0 ncp114amx125tcg 1.25 v a 180 ncp114amx130tcg 1.3 v aa 0 ncp114amx135tcg 1.35 v an 0 ncp114amx150tcg 1.5 v v 0 ncp114amx160tcg 1.6 v 2 180 ncp114amx180tbg 1.8 v j 180 ncp114amx180tcg 1.8 v j 180 ncp114amx185tcg 1.85 v y 0 ncp114amx210tcg 2.1 v l 180 ncp114amx220tcg 2.2 v q 180 ncp114amx240tcg 2.4 v ah 0 ncp114amx250tbg 2.5 v af 0 ncp114amx250tcg 2.5 v af 0 ncp114amx260tcg 2.6 v t 180 ncp114amx270tcg 2.7 v aj 0 ncp114amx280tbg 2.8 v 2 0 ncp114amx280tcg 2.8 v 2 0 ncp114amx285tcg 2.85 v 3 0 ncp114amx290tcg 2.9 v az 0 ncp114amx300tcg 3.0 v 4 0 ncp114amx310tbg 3.1 v 5 0 ncp114amx310tcg 3.1 v 5 0 ncp114amx320tcg 3.2 v ag 0 ncp114amx330tbg 3.3 v 6 0 ncp114amx330tcg 3.3 v 6 0 ncp114amx345tcg 3.45 v ac 0 ncp114amx350tcg 3.5 v 4 180 ncp114amx360tcg 3.6 v au 0
ncp114 www. onsemi.com 16 ordering information device shipping ? package option marking rotation marking voltage option ncp114bmx075tcg 0.75 v cw 0 without active output discharge function udfn4 (pb-free) 3000 / tape & reel ncp114bmx100tcg 1.0 v 6 270 ncp114bmx120tcg 1.2 v t 90 ncp114bmx150tcg 1.5 v v 90 ncp114bmx180tcg 1.8 v j 270 ncp114bmx250tcg 2.5 v cf 0 ncp114bmx280tcg 2.8 v 2 90 ncp114bmx300tcg 3.0 v 4 90 ncp114bmx330tcg 3.3 v 6 90 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. ordering information device voltage option marking option package shipping ? ncp114asn080t1g 0.8 v cay with output active discharge function tsop?5 (pb?free) 3000 / tape & ree l ncp114asn120t1g 1.2 v cac ncp114asn120t2g ncp114asn150t1g 1.5 v cax ncp114asn150t2g ncp114asn180t1g 1.8 v cad ncp114asn180t2g ncp114asn250t1g 2.5 v cag ncp114asn250t2g ncp114asn260t1g 2.6 v caq ncp114asn270t1g 2.7 v cav ncp114asn280t1g 2.8 v cah ncp114asn280t2g NCP114ASN290T1G 2.9 v cau ncp114asn300t1g 3.0 v cak ncp114asn330t1g 3.3 v cal ncp114asn330t2g ncp114bsn330t1g 3.3 v cdl without output active discharge ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncp114 www. onsemi.com 17 package dimensions tsop?5 case 483 issue m 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimension a. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a b c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 m 0 10 s 2.50 3.00 123 54 s a g b d h c j 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 c seating plane 0.05 k m detail z detail z top view side view a b end view 1.35 1.65 2.85 3.15
ncp114 www. onsemi.com 18 package dimensions case 517cu issue a notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimension b applies to plated terminal and is measured between 0.03 and 0.07 from the terminal tips. 4. coplanarity applies to the exposed pad as well as the terminals. a b e d d2 bottom view b e 4x note 3 2x 0.05 c pin one reference top view 2x 0.05 c a a1 (a3) 0.05 c 0.10 c c seating plane side view l 3x 1 2 dim min max millimeters a ??? 0.60 a1 0.00 0.05 a3 0.15 ref b 0.20 0.30 d 1.00 bsc d2 0.38 0.58 e 1.00 bsc e 0.65 bsc l 0.20 0.30 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. mounting footprint* 1.30 0.30 0.53 4x dimensions: millimeters recommended package outline note 4 e/2 d2 45 4 3 0.65 pitch detail a l2 0.27 0.37 0.58 2x l2 detail a c0.27 x 0.25 1 detail b 0.23 4x detail b 0.10 3x a m 0.10 b c m 0.05 c 3x c0.18 x 45 0.43 3x on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ncp114/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative ? bluetooth is a registered trademark of bluetooth sig. zigbee is a registered trademark of zigbee alliance.

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